Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations
نویسندگان
چکیده
We demonstrated that modulated infrared radiation can cause the resonant excitation of plasma oscillations in quantum well diode and transistor structures with high electron mobility. This effect provides a new mechanism for the generation of tunable terahertz radiation using photomixing of infrared signals. We developed a device model for a quantum well photomixer and calculated its high-frequency performance. It was shown that the proposed device can significantly surpass photomixers utilizing standard quantum well infrared photodetectors. © 2002 American Institute of Physics. @DOI: 10.1063/1.1431436#
منابع مشابه
Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging o...
متن کاملPossibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer
We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A ve...
متن کاملEnergy dispersion relations for holes inn silicon quantum wells and quantum wires
We calculate the energy dispersion relations in Si quantum wells (QW), E(k2D), and quantum wires (QWR), E(k1D), focusing on the regions with negative effective mass (NEM) in the valence band. The existence of such NEM regions is a necessary condition for the current oscillations in ballistic quasineutral plasma in semiconductor structures. The frequency range of such oscillations can be extende...
متن کاملWorkshops and Short Courses
THz technology development is a vibrant scientific field with new discoveries and techniques being utilized to advance the Stateof-the-Art. While novel material systems such as grapheme have shown promise in the THz range, fully functional systems in the THz range are also becoming more common. This workshop will bring together experts from various academic, national labs and commercial enterpr...
متن کاملTerahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers
We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime...
متن کامل